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       CDBF0540-HF SMD Schottky Barrier Diode 0.102(2.60) 0.095(2.40) 0.020(0.50) Typ. 0.051(1.30) 0.043(1.10) 0.035(0.90) 0.027(0.70) Dimensions in inches and (millimeter) 0.012 (0.30) Typ. 0.040(1.00) Typ. +125 O C TSTG Symbol Min Typ Max Unit Parameter Conditions Forward voltage VF V Reverse current mA 0.01 5 O C unless otherwise noted) Maximum Rating (at TA=2 5 O C unless otherwise noted) Electrical Characteristics (at TA=2 n Typ Max Unit IO VR VRM Average forward rectified current Reverse voltage Peak reverse voltage Forward current,surge peak Symbol Mi Parameter Conditions V V mA 500 40 40 Tj Storage temperature Junction temperature O C +125 -40 IFSM 8.3 ms single half sine-wave superimposed on rate load (JEDEC method) 5.5 A 5 O C IF = 0 .5 A @ Ta = 2 0 O C IF = 1 A @ Ta = 10 5 O C IF = 1 A @ Ta = 2 0 O C IF = 0 .5 A @ Ta = 10 0.51 0.62 0.64 0.46 0.02 IR 2 5 O C a = 100 O C VR = 4 0V @Ta = 2 5 O C VR = 2 0V @Ta = 2 0 O C VR = 4 0V @Ta = 10 VR = 2 0V @T 5 Capacitance between terminals f = 1 MHz, and 0 VDC reverse voltage CT pF 170 Reverse recovery time IF = I R = 1 0mA, Irr x IR, RL = 1 00ohm Trr ns 22 Page 1 QW-G1090 REV:A Comchip Technology CO., LTD. Features - Low forward voltage. - Designed for mounting on small surface. - Extremely thin / leadless package. - Majority carrier conduction. Mechanical data - Case: 1005/SOD-323F standard package, m olded plastic. - Terminals: Gold plated, solderable per M IL-STD-750,method 2026. - Marking code: cathode band & BN - Mounting position: Any - Weight: 0.006 gram(approx.). Io = 5 00 mA RoHS Device Halogen Free VR = 4 0 Volts 1005/SOD-323F |